DocumentCode
808780
Title
40 Gbit/s n-i-n InP Mach-Zehnder modulator with a π voltage of 2.2 V
Author
Tsuzuki, K. ; Ishibashi, T. ; Ito, T. ; Oku, S. ; Shibata, Y. ; Iga, R. ; Kondo, Y. ; Tohmori, Y.
Author_Institution
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Volume
39
Issue
20
fYear
2003
Firstpage
1464
Lastpage
1466
Abstract
Using an n-i-n heterostructure, a travelling-wave Mach-Zehnder modulator on an InP substrate has been developed. An extremely small π voltage (Vπ) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described.
Keywords
Mach-Zehnder interferometers; optical fibre networks; optical modulation; wavelength division multiplexing; 2.2 V; 3 mm; 40 Gbit/s; Mach-Zehnder modulator; n-i-n heterostructure; signal-electrode length; travelling-wave Mach-Zehnder modulator; wavelength-insensitive extinction characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030939
Filename
1238605
Link To Document