Title :
On the nature of the defect passivation in polycrystalline silicon by hydrogen and oxygen plasma treatments
Author :
Nickel, N.H. ; Mei, P. ; Boyce, J.B.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
fDate :
8/1/1995 12:00:00 AM
Abstract :
The effect of hydrogen and oxygen plasmas on the properties of polycrystalline silicon films and thin-film transistors are investigated. The results clearly demonstrate that an oxygen plasma does not passivate grain boundary defects. However, an oxygen plasma treatment at 300 K still improves the electrical properties of thin-film transistors.
Keywords :
elemental semiconductors; grain boundaries; hydrogen; oxygen; passivation; plasma applications; semiconductor technology; semiconductor thin films; silicon; thin film transistors; 300 K; H; H plasma treatment; O; O plasma treatment; Si; defect passivation; electrical properties; grain boundary defects; polycrystalline Si; polysilicon films; thin-film transistors; Hydrogen; Oxygen; Passivation; Plasma applications; Plasma density; Plasma devices; Plasma properties; Plasma temperature; Silicon; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
