Title :
Leakage current modeling of series-connected thin film transistors
Author :
Sturm, J.C. ; Wu, I.W. ; Hack, M.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
8/1/1995 12:00:00 AM
Abstract :
The leakage current of an arbitrary number of series-connected polysilicon Thin Film Transistors (TFTs) with a common gate is shown to be easily computed from the I-V characteristics of a single FET for the first time, both by an analytical model and by graphical techniques. Good agreement with experimental data is obtained for drain biases greater than ∼1 V. The work is also applicable to single crystal Silicon-On-Insulator (SOI) TFTs.
Keywords :
insulated gate field effect transistors; leakage currents; semiconductor device models; silicon-on-insulator; thin film transistors; 1 V; I-V characteristics; SOI TFT; Si; analytical model; drain bias; graphical techniques; leakage current modeling; polysilicon TFT; series-connected TFT; thin film transistors; Active matrix liquid crystal displays; Active matrix technology; Analytical models; Circuits; Computer hacking; FETs; Leakage current; Silicon on insulator technology; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
