DocumentCode
808853
Title
96 W AlGaN/GaN heterojunction FET with field-modulating plate
Author
Okamoto, Y. ; Ando, Y. ; Hataya, K. ; Miyamoto, H. ; Nakayama, T. ; Inoue, T. ; Kuzuhara, M.
Author_Institution
Photonic & Wireless Devices Res. Labs., R&D Assoc. for Future Electron Devices, Shiga, Japan
Volume
39
Issue
20
fYear
2003
Firstpage
1474
Lastpage
1475
Abstract
An AlGaN/GaN heterojunction FET with a field-modulating plate has been successfully fabricated. A maximum drain current of 900 mA/mm was obtained with a gate-drain breakdown voltage of over 150 V. A 24 mm-wide FET exhibited 96 W (4.0 W/mm) output power, 54% power-added efficiency and 8.5 dB linear gain at a drain bias of 32 V.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; wide band gap semiconductors; 150 V; 24 mm; 32 V; 54 percent; 8.5 dB; 96 W; AlGaN-GaN; AlGaN/GaN HFET; DC power performance; GaN-based FETs; RF power performance; drain current; field-modulating plate; gate drain breakdown voltage; heterojunction FET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030947
Filename
1238611
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