Title :
InP/InGaAs SHBTs with 75 nm collector and fT>500 GHz
Author :
Hafez, W. ; Lai, Jie-Wei ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Champaign, IL, USA
Abstract :
InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35×12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100 kA/cm2. This work demonstrates clear progress toward a THz transistor.
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; submillimetre wave transistors; 2.7 V; 25 nm; 509 GHz; 75 nm; InP-InGaAs; InP/InGaAs SHBTs; THz transistor; breakdown voltage; current-gain cutoff frequencies; electron transit time reduction; laterally scaled HBT devices; self-aligned submicron process; single heterojunction bipolar transistors; vertically scaled HBT devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030951
