• DocumentCode
    808864
  • Title

    InP/InGaAs SHBTs with 75 nm collector and fT>500 GHz

  • Author

    Hafez, W. ; Lai, Jie-Wei ; Feng, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Champaign, IL, USA
  • Volume
    39
  • Issue
    20
  • fYear
    2003
  • Firstpage
    1475
  • Lastpage
    1476
  • Abstract
    InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35×12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100 kA/cm2. This work demonstrates clear progress toward a THz transistor.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; submillimetre wave transistors; 2.7 V; 25 nm; 509 GHz; 75 nm; InP-InGaAs; InP/InGaAs SHBTs; THz transistor; breakdown voltage; current-gain cutoff frequencies; electron transit time reduction; laterally scaled HBT devices; self-aligned submicron process; single heterojunction bipolar transistors; vertically scaled HBT devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030951
  • Filename
    1238612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808864