Title :
MOSFET bias dependent series resistance extraction from RF measurements
Author :
Torres-Torres, R. ; Murphy-Arteaga, R.S. ; Decoutere, S.
Author_Institution :
Dept. of Electron., Nat. Inst. for Astrophys. Opt. & Electron., Puebla, Mexico
Abstract :
A simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented. This technique uses the measured data of a single device. The extracted data allow the accurate modelling of the bias dependence of the output resistance of the MOSFET up to 27 GHz.
Keywords :
MOSFET; S-parameters; UHF field effect transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 0 to 27 GHz; MOSFET; RF measurements; bias dependent series resistance extraction; drain series resistances; experimental S-parameters; gate-bias dependent source resistances; modelling; output resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030936
