• DocumentCode
    808875
  • Title

    MOSFET bias dependent series resistance extraction from RF measurements

  • Author

    Torres-Torres, R. ; Murphy-Arteaga, R.S. ; Decoutere, S.

  • Author_Institution
    Dept. of Electron., Nat. Inst. for Astrophys. Opt. & Electron., Puebla, Mexico
  • Volume
    39
  • Issue
    20
  • fYear
    2003
  • Firstpage
    1476
  • Lastpage
    1478
  • Abstract
    A simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented. This technique uses the measured data of a single device. The extracted data allow the accurate modelling of the bias dependence of the output resistance of the MOSFET up to 27 GHz.
  • Keywords
    MOSFET; S-parameters; UHF field effect transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 0 to 27 GHz; MOSFET; RF measurements; bias dependent series resistance extraction; drain series resistances; experimental S-parameters; gate-bias dependent source resistances; modelling; output resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030936
  • Filename
    1238613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808875