Title :
A 23.8-GHz SOI CMOS tuned amplifier
Author :
Floyd, Brian A. ; Shi, Leathen ; Taur, Yuan ; Lagnado, Isaac ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1-μm silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source-follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are -45 and -9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. The amplifier draws 53 mA from a 1.5-V supply. The measured on-wafer noise figure is 10 dB, while the input-referred third-order intercept point is -7.8 dBm. The results demonstrate that 0.1-μm CMOS technology may be used for 20-GHz RF applications and suggest even higher operating frequencies and better performance for further scaled technologies
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; integrated circuit noise; silicon-on-insulator; 0.1 micron; 1.5 V; 10 dB; 23.8 GHz; 53 mA; 7.3 dB; CMOS LNA; MOS capacitors; SOI CMOS tuned amplifier; cascode; common-gate; low-noise amplifier; onchip spiral inductors; partially scaled SOI CMOS technology; source-follower; three-stage amplifier; Acoustic reflection; CMOS technology; Gain; Inductors; MOS capacitors; Noise figure; Noise measurement; Radiofrequency amplifiers; Silicon on insulator technology; Spirals;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.802334
