Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE

Author

Yamazaki, H. ; Sakata, Y. ; Yamaguchi, M. ; Inomoto, Y. ; Komatsu, K.

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan

Volume

32

Issue

2

fYear

1996

fDate

1/18/1996 12:00:00 AM

Firstpage

109

Lastpage

111

Abstract

The authors have reduced modulator drive voltage in DFB-LD/modulator integrated light sources (DFB/MODs) taking fabrication tolerance into account. By enhancing the quantum confined Stark effect through well width increase and optimising the doping profile, DFB/MODS with >13 dB extinction ratio at 1.5 V and >4 mW (+6 dBm) output power at 100 mA were achieved while maintaining a reasonably large fabrication tolerance

Keywords

distributed feedback lasers; electro-optical modulation; electroabsorption; integrated optics; light sources; optical fabrication; quantum confined Stark effect; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.5 V; 100 mA; 4 mW; DFB-LD; bandgap energy controlled selective MOVPE; doping profile; fabrication tolerance; high power DFB-LD/modulator; integrated light sources; large fabrication tolerance; low drive voltage; modulator drive voltage; output power; quantum confined Stark effect; quantum well lasers; well width;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960092

Filename

490867