Modelling of the depleted p-JFET radiation detector

Author

Tikkanen, T. ; Jalas, P. ; Laakso, M. ; Grahn, K. ; Leinonen, K.

Author_Institution

Res. Inst. for High Energy Phys., Helsinki Univ., Espoo, Finland

Volume

39

Issue

5

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1519

Lastpage

1522

Abstract

The feasibility of a depleted junction field effect transistor (JFET) detector structure which is a combined radiation detector and low-noise charge readout transistor is studied computationally. The operating principle of the depleted p-JET detector incorporating a p-channel JFET structure processed on the surface of a high-resistivity n-type silicon chip is described. Results from two-dimensional potential and charge carrier concentration simulation of the structure indicate that the charge signal can be successfully read out by the FET provided that an appropriate doping profile shape is implemented in the device

Keywords

semiconductor counters; charge carrier concentration simulation; depleted junction field effect transistor; depleted p-JFET radiation detector; detector structure; doping profile shape; high-resistivity n-type silicon chip; low-noise charge readout transistor; two-dimensional potential; Anodes; Capacitance; Electrodes; Electrons; Energy resolution; FETs; Preamplifiers; Radiation detectors; Semiconductor device noise; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.173236

Filename

173236