The role of grain-boundary on the hydrogen-induced degradation in thin-film ferroelectric capacitors

Author

Lee, Jang-Sik ; Joo, Seung-Ki

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

Volume

23

Issue

9

fYear

2002

Firstpage

517

Lastpage

519

Abstract

The electrical properties of thin-film ferroelectric capacitors are known to degrade severely when exposed to hydrogen. In this study, we directly measured the effects of the grain boundary on the hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O/sub 3/ (PZT) thin films by the location of the top Pt electrode either inside the grains or at the grain boundary. A strong relationship between the grain boundary and the electrical properties of ferroelectric capacitors as a result of hydrogen annealing was found. The degradation of the electrical properties in thin-film ferroelectric capacitors after hydrogen annealing is mainly due to the presence of the grain boundary in the ferroelectric thin film.

Keywords

annealing; ferroelectric capacitors; ferroelectric thin films; grain boundaries; hydrogen; lead compounds; platinum; thin film capacitors; H annealing; H-induced degradation; H/sub 2/; PZT thin films; Pt-PZT; Pt-PbZrO3TiO3; electrical properties; ferroelectric thin films; grain boundary; thin-film ferroelectric capacitors; top Pt electrode; Annealing; Capacitors; Degradation; Ferroelectric materials; Grain boundaries; Hydrogen; Lead; Sputtering; Thin film circuits; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.802604

Filename

1028985