Title :
Effect of the nitrous oxide plasma treatment on the MIM capacitor
Author :
Ng, C.H. ; Chu, S.-F.
Author_Institution :
Technol. Dev. Dept., Chartered Semicond. Manuf. Ltd., Singapore, Singapore
Abstract :
We report the demonstration of near zero voltage coefficient of capacitance (VCC) by exposing the silicon nitride dielectric of the metal-insulator-metal capacitor (MIM) to nitrous oxide (N/sub 2/O) plasma. Oxidization in the N/sub 2/O plasma enhanced the hard breakdown field, whereby an excess of 9 MV/cm was achieved. In addition, low-temperature coefficient of capacitance (TCC) of < 20 ppm/K and high dielectric constant /spl ges/ 6.5 were preserved.
Keywords :
MIM devices; capacitors; electric breakdown; oxidation; permittivity; plasma materials processing; silicon compounds; MIM capacitor; N/sub 2/O; SiN; dielectric constant; hard breakdown field; nitrous oxide plasma treatment; oxidation; silicon nitride dielectric; temperature coefficient of capacitance; voltage coefficient of capacitance; Bonding; Capacitance; Crystalline materials; Dielectric constant; MIM capacitors; Plasma measurements; Plasma temperature; Silicon compounds; Tin; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802586
