Design of IGBT with integral freewheeling diode

Author

Napoli, Ettore ; Spirito, Paolo ; Strollo, Antonio G M ; Frisina, Ferruccio ; Fragapane, Leonardo ; Fagone, Domenico

Author_Institution

Dept. of Electron. Eng., Naples Univ., Italy

Volume

23

Issue

9

fYear

2002

Firstpage

532

Lastpage

534

Abstract

A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented. The proposed solution requires virtually no silicon area penalty with respect to a standard IGBT. Static and dynamic experimental results show the correct behavior of both IGBT and freewheeling diode. Further, it is shown that the lateral diode surrounding the multicellular IGBT can support IGBT direct current with low on-state voltage drop. The operation mechanisms of the composite structure and design techniques to improve structure dynamic behavior are investigated through two-dimensional numerical device simulations.

Keywords

insulated gate bipolar transistors; power semiconductor diodes; composite structure; design technique; integral freewheeling diode; lateral diode; multicellular IGBT; on-state voltage drop; power device; punch-through insulated gate bipolar transistor; silicon area penalty; two-dimensional numerical simulation; Circuit simulation; Costs; Current density; Diffusion bonding; Insulated gate bipolar transistors; Numerical simulation; P-i-n diodes; Semiconductor diodes; Silicon; Switching circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.802590

Filename

1028990