Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers

Author

Maciejko, Romain ; Glinski, Jan M. ; Champagne, A. ; Berger, Jean ; Samson, Luc

Author_Institution

Dept. of Eng. Phys., Montreal Univ., Que., Canada

Volume

25

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

651

Lastpage

661

Abstract

The dielectric window opening in ridge waveguide lasers needed for the ohmic contact is shown to be able to cause appreciable stress deformations of the effective permittivity which defines the waveguide properties of the laser. For edge force values in the range of 40 dyn/μm, the emission properties of the laser, namely the near field and the threshold current, start to change. The results indicate that for still higher values, filamentation begins to occur. The numerical results presented use a global self-consistent model of the semiconductor laser and finite-element method for stress-field calculations

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; permittivity; photoelasticity; semiconductor junction lasers; stress analysis; III-IV semiconductors; InGaAsP; dielectric window opening; edge force values; effective permittivity; emission patterns; filamentation; finite-element method; global self-consistent model; near field; ohmic contact; photoelastic effects; ridge-waveguide lasers; semiconductor laser; stress deformations; stress-field calculations; threshold current; waveguide properties; Dielectrics; Laser modes; Laser transitions; Ohmic contacts; Permittivity; Photoelasticity; Semiconductor lasers; Stress; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.17327

Filename

17327