DocumentCode :
809406
Title :
Linewidth of laser diodes with nonuniform phase-amplitude α-factor
Author :
Arnaud, Jacques
Author_Institution :
Equipe de Microoptoelectron. de Montpellier, Univ. of Sci. & Tech. du Languedoc, France
Volume :
25
Issue :
4
fYear :
1989
fDate :
4/1/1989 12:00:00 AM
Firstpage :
668
Lastpage :
677
Abstract :
The linewidth of a laser diode having a phase-amplitude factor α that varies arbitrarily along the path is calculated. For simplicity, an ideal single-mode ring-type laser diode with only one wave circulating is considered. The theory is exact in the limit of large injected currents, provided parameters such as the carrier temperature do not vary and the gain or loss per wavelength is small. It is found that when the electron-hole pairs are injected independently of each other (that is, when the pump fluctuations are spatially uncorrelated shot noises) the linewidth is half the value obtained earlier for the linear regime multiplied by (1+α2)av where the round-trip averaging is affected with respect to the reciprocal of the power gain. Specific examples, in particular a sequence of amplifiers and partially reflecting mirrors, are considered
Keywords :
laser theory; mirrors; ring lasers; semiconductor junction lasers; amplifiers; carrier temperature; electron-hole pairs; gain per wordlength; injected currents; laser diode linewidth; loss per wavelength; nonuniform phase-amplitude α-factor; partially reflecting mirrors; power gain; pump fluctuations; semiconductor laser; single-mode ring-type laser diode; spatially uncorrelated shot noises; Charge carrier density; Current density; Diode lasers; Ear; Fluctuations; Frequency; Mirrors; Optical materials; Optical resonators; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.17329
Filename :
17329
Link To Document :
بازگشت