DocumentCode :
809441
Title :
Effect of 1/f-type FM noise on semiconductor-laser linewidth residual in high-power limit
Author :
Kikuchi, Kazuro
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Bunkyo, Japan
Volume :
25
Issue :
4
fYear :
1989
fDate :
4/1/1989 12:00:00 AM
Firstpage :
684
Lastpage :
688
Abstract :
The FM-noise spectrum and the linewidth of 1.3 μm DFB (distributed feedback) semiconductor lasers measured in the high-power state up to 20 mW are discussed. A 5-MHz residual linewidth is observed in the high-power limit. The FM-noise spectrum consists of white noise and 1/f noise. The spectral density of the white noise is reduced by the increase in the output power, whereas that of the 1/f noise is unchanged, which means that the linewidth residual in the high-power limit is caused by the 1/f noise rather than the white noise. The impact of the 1/f-type FM noise on coherent optical communication systems is also discussed
Keywords :
distributed feedback lasers; electron device noise; frequency modulation; optical communication equipment; random noise; semiconductor junction lasers; spectral line breadth; white noise; 1.3 micron; 1/f noise; 20 mW; DFB laser; FM-noise spectrum; coherent optical communication systems; distributed feedback semiconductor lasers; high-power limit; output power; residual linewidth; semiconductor-laser linewidth; spectral density; white noise; Distributed feedback devices; Laser feedback; Laser noise; Noise reduction; Optical fiber communication; Optical noise; Power generation; Semiconductor device noise; Semiconductor lasers; White noise;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.17331
Filename :
17331
Link To Document :
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