Title :
Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer
Author :
Yoo, B.S. ; Chu, H.Y. ; Park, M.S. ; Park, H.-H. ; Lee, E.H.
Author_Institution :
Res. Inst., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
1/18/1996 12:00:00 AM
Abstract :
The authors report the successful development of a method stabilising the fundamental transverse mode of a vertical-cavity surface-emitting laser using a low-temperature-deposited amorphous GaAs (a-GaAs) layer of a high refractive index. For a device of 10 μm diameter, stable fundamental mode emission has been observed over a wide range of current. Results are attributed to the antiguide effect of the a-GaAs-buried structure
Keywords :
laser modes; laser stability; semiconductor lasers; surface emitting lasers; GaAs; amorphous GaAs layer; antiguide; buried structure; low-temperature-deposition; refractive index; stable fundamental transverse mode emission; vertical-cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960070
