DocumentCode
809486
Title
Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer
Author
Yoo, B.S. ; Chu, H.Y. ; Park, M.S. ; Park, H.-H. ; Lee, E.H.
Author_Institution
Res. Inst., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Volume
32
Issue
2
fYear
1996
fDate
1/18/1996 12:00:00 AM
Firstpage
116
Lastpage
117
Abstract
The authors report the successful development of a method stabilising the fundamental transverse mode of a vertical-cavity surface-emitting laser using a low-temperature-deposited amorphous GaAs (a-GaAs) layer of a high refractive index. For a device of 10 μm diameter, stable fundamental mode emission has been observed over a wide range of current. Results are attributed to the antiguide effect of the a-GaAs-buried structure
Keywords
laser modes; laser stability; semiconductor lasers; surface emitting lasers; GaAs; amorphous GaAs layer; antiguide; buried structure; low-temperature-deposition; refractive index; stable fundamental transverse mode emission; vertical-cavity surface-emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960070
Filename
490871
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