High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression

Author

Kwong, N.S.K. ; Lau, K.Y. ; Bar-Chaim, N.

Author_Institution

Ortel Corp., Alhambra, CA, USA

Volume

25

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

696

Lastpage

704

Abstract

The operation principles of a high-power high-efficiency GaAlAs superluminescent diode based on an internal absorber for lasing suppression is described. The absorber is based on an unpumped/reverse-biased section in the device, and the superluminescent diode characteristic depends heavily on the bias condition of the absorber section. The very high efficiency of the device arises from the strong waveguiding effect of the buried heterostructure. A theory which accurately describes the various device characteristics is described.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; superradiance; GaAlAs; bias condition; heterostructure; high-efficiency; high-power; internal absorber; lasing suppression; superluminescent diode characteristic; unpumped/reverse-biased section; waveguiding effect; Coatings; Optical devices; Optical feedback; Optical fiber devices; Optical fiber polarization; Optical fiber sensors; Optical fiber theory; Optical pumping; Power generation; Superluminescent diodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.17333

Filename

17333