Title :
Interlevel dielectric via etch process monitoring by atomic force microscopy
Author :
Howard, A.J. ; Baca, A.G. ; Shul, R.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
7/20/1995 12:00:00 AM
Abstract :
The use of AFM for in-line monitoring of an interlevel dielectric via plasma etching step is reported. By comparing etch depths, to via types contacting both Au- and W-based metals, the AFM can non-destructively determine whether micrometre-sized vias have been cleared. Owing to the etch selectivity of the SF6/O2 plasma, the Au-based ohmic metal acts as an etch stop whereas the W-based refractory gate contact continues to etch
Keywords :
atomic force microscopy; integrated circuit interconnections; integrated circuit measurement; integrated circuit yield; nondestructive testing; sputter etching; O2; SF6; SF6-O2; atomic force microscopy; etch depths; etch process monitoring; etch selectivity; interlevel dielectric; micrometre-sized vias; nondestructive testing; ohmic metal; plasma etching step; refractory gate contact; via types;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950843
