Title :
Zero-bias and low-chirp, monolithically integrated 10 Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate
Author :
Sahlén, O. ; Lundqvist, L. ; Funke, S.
Author_Institution :
Ericsson Components AB, Kista, Sweden
fDate :
1/18/1996 12:00:00 AM
Abstract :
A DFB-laser monolithically integrated with a short (150 μm) bulk electroabsorption (EA) modulator has been developed on a semi-insulating substrate. An extinction ratio of 10 dB for 0 to -2 V modulation was obtained with low chirp. Penalty-free 10 Gbit/s transmission over 41 km standard fibre, and 2.5 dB penalty over 71 km standard fibre was achieved
Keywords :
III-V semiconductors; chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; indium compounds; integrated optics; integrated optoelectronics; optical communication equipment; semiconductor lasers; substrates; 0 to 2 V; 10 Gbit/s; 150 mum; 41 km; 71 km; DFB laser; InP; electroabsorption modulator; extinction ratio; low chirp; low-chirp; monolithically integrated; penalty-free transmission; semi-insulating InP substrate; semi-insulating substrate; standard fibre; zero-bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960079
