DocumentCode
809785
Title
1.3 μm beam-expander integrated laser grown by single-step MOVPE
Author
Sato, H. ; Aoki, M. ; Takahashi, M. ; Komori, M. ; Uomi, K. ; Tsuji, S.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
31
Issue
15
fYear
1995
fDate
7/20/1995 12:00:00 AM
Firstpage
1241
Lastpage
1242
Abstract
A new structure for a 1.3 μm-wave length beam-expander integrated ridge-waveguide laser is demonstrated that does not require a regrowth step. A narrow beam divergence of 5.4° (lateral) and 18.9° (vertical) enables a laser diode to be coupled to a cleaved singlemode fibre with an efficiency as high as 33% with a 1 dB alignment tolerance of ±2.4 μm laterally and +1.5 μm vertically
Keywords
integrated optics; optical fibre couplers; ridge waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micrometre; 33 percent; alignment tolerance; beam divergence; beam-expander integrated laser; cleaved singlemode fibre; laser diode; ridge-waveguide laser; single-step MOVPE;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950849
Filename
400340
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