Title :
D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz
Author :
Wollitzer, M. ; Buechler, J. ; Schäffler, F. ; Luy, J.F.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
fDate :
1/18/1996 12:00:00 AM
Abstract :
Silicon flat profile double drift (DD) and double Read (DLHL) IMPATT diodes have been designed and fabricated, using a novel beamlead process. The goal for the design of the active layer is a maximum negative resistance of the device for a given DC power density. Experimental results are 225 mW of RF power with DD diodes and 300 mW for DLHL diodes, both in the 140 GHz range
Keywords :
IMPATT diodes; beam-lead devices; elemental semiconductors; millimetre wave diodes; negative resistance devices; silicon; 140 GHz; 225 mW; 300 mW; CW output power; D-band; DC power density; DLHL diodes; IMPATT diodes; RF power; Si; active layer; beamlead process; double Read diodes; flat profile double drift diodes; maximum negative resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960088
