Title :
Digital alloy AlAsSb/AlGaAsSb distributed Bragg reflectors lattice matched to InP for 1.3-1.55 μm wavelength range
Author :
Blum, O. ; Fritz, I.J. ; Dawson, L.R. ; Drummond, T.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
7/20/1995 12:00:00 AM
Abstract :
The authors report a distributed Bragg reflector (DBR) consisting of 15.5 periods of AlAsSb and AlGaAsSb digital alloy with a peak reflectivity >95% at 1.46 μm. The DBR is grown by molecular beam epitaxy on an InP substrate
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1.3 to 1.55 micrometre; AlAsSb-AlGaAsSb-InP; InP; digital alloy; distributed Bragg reflectors; lattice matching; molecular beam epitaxy; peak reflectivity; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950852
