High-frequency modulation characteristics of hybrid dielectric/AlGaAs mirror singlemode VCSELs

Author

Lehman, J.A. ; Morgan, R.A. ; Hibbs-Brenner, M.K. ; Carlson, D.

Author_Institution

Honeywell Inc., Minneapolis, MN, USA

Volume

31

Issue

15

fYear

1995

fDate

7/20/1995 12:00:00 AM

Firstpage

1251

Lastpage

1252

Abstract

The authors have measured the small-signal frequency response characteristics of a GaAs VCSEL (λ=835 nm) implementing a novel MOVPE-grown AlGaAs/AlAs-TiO₂/SiO₂ hybrid distributed Bragg reflector used to control emission to a single mode. A small-signal 3 dB bandwidth of 12.1 GHz was recorded at a bias level of only 2.8 mA. A very high modulation efficiency of 9.5 GHz√(mA) was measured which is the highest reported for VCSELs or any semiconductor laser of any variety. In addition, large signal measurements were conducted which showed open eye patterns with pre-bias currents of ~0 mA demonstrating the possibility of direct logic-level drive

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser mirrors; laser modes; optical modulation; semiconductor lasers; surface emitting lasers; 12.1 GHz; 2.8 mA; 835 nm; AlGaAs-AlAs-TiO₂-SiO₂; AlGaAs/AlAs-TiO₂/SiO₂ hybrid distributed Bragg reflector; GaAs; MOVPE; dielectric mirror; direct logic-level drive; high-frequency modulation; large signal measurements; open eye patterns; semiconductor laser; singlemode VCSELs; small-signal frequency response;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950830

Filename

400347