Title :
Passive modelocking of 1.3μm semiconductor laser amplifier in loop mirror configuration
Author :
Ammann, H. ; Hodel, W. ; Weber, H.P. ; Holtmann, C. ; Melchior, H.
Author_Institution :
Inst. of Appl. Phys., Bern Univ., Switzerland
fDate :
7/20/1995 12:00:00 AM
Abstract :
A passively mode-locked 1.3 μm InGaAsP/InP semiconductor laser amplifier in a fibre loop mirror configuration, is demonstrated for the first time, to the authors´ knowledge. Pulse durations of <20 ps at repetition rates of 0.5-2 GHz, an average output power level in the order of 1 mW and a tuning range of 1300-1320 nm were achieved. The laser has the potential for integration on a single chip. which would result in a compact and high repetition rate source of picosecond pulses in the second communication window
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; laser mode locking; laser tuning; optical communication equipment; semiconductor lasers; 1 mW; 1.3 micrometre; 20 ps; InGaAsP-InP; average output power level; communication window; loop mirror configuration; passive modelocking; picosecond pulses; pulse durations; repetition rates; semiconductor laser amplifier; tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950841
