Title :
AlAs/AlGaAs reflection modulator for visible wavelengths
Author :
Egan, R.J. ; Clark, A. ; Jagadish, C. ; Williams, J.S.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fDate :
7/20/1995 12:00:00 AM
Abstract :
The performance of a surface normal modulator operating at visible wavelengths is described. Modulation at these wavelengths is achieved by incorporating aluminium in the well material and increasing the aluminium content in the barrier. Maximum contrast is achieved at 660 nm with a low insertion loss (1.5 dB) and a differential reflectivity of 13% for 13 V
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; reflectivity; semiconductor quantum wells; visible spectra; 1.5 dB; 13 V; 660 nm; AlAs-AlGaAs; MQW devices; barrier; differential reflectivity; insertion loss; maximum contrast; reflection modulator; surface normal modulator; visible wavelengths; well material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950876
