Title :
Quantum well intermixing with high spatial selectivity using a pulsed laser technique
Author :
McLean, C.J. ; McKee, A. ; Lullo, G. ; Bryce, A.C. ; De La Rue, R.M. ; Marsh, J.H.
fDate :
7/20/1995 12:00:00 AM
Abstract :
The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100 meV to be realised with a high spatial resolution in a GalnAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700°C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be ⩽25 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beam effects; optical planar waveguides; rapid thermal annealing; semiconductor quantum wells; 100 meV; 700 degC; GaInAs-GaInAsP; MQW waveguide structure; Q-switched laser; bandgap shifts; disordering process; masked interface; pulsed laser technique; quantum well intermixing; rapid thermal annealing; spatial resolution; spatial selectivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950868
