DocumentCode
810115
Title
16% external quantum efficiency from planar microcavity LEDs at 940nm by precise matching of cavity wavelength
Author
Blondelle, J. ; De Neve, H. ; Demeester, P. ; Van Daele, P. ; Borghs, G. ; Baets, R.
Volume
31
Issue
15
fYear
1995
fDate
7/20/1995 12:00:00 AM
Firstpage
1286
Lastpage
1288
Abstract
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LEDs are reported. The use of regrowth for cavity resonance tuning and its effect on device performance are demonstrated. The best results obtained include external quantum efficiencies of 16%. At 5mA, 1mW of optical power is delivered with an intensity of 280μW/sr
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; light emitting diodes; semiconductor quantum wells; 1 mW; 16 percent; 5 mA; 940 nm; InGaAs-(Al)GaAs; QW LEDs; cavity resonance tuning; cavity wavelength matching; external quantum efficiency; optical intensity; planar microcavity LEDs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950884
Filename
400371
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