Title :
Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation
Author :
Loni, A. ; Simons, A.J. ; Cox, T.I. ; Calcott, P.D.J. ; Canham, L.T.
Author_Institution :
Defence Res. Agency, Great Malvern, UK
fDate :
7/20/1995 12:00:00 AM
Abstract :
The authors report an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1%, under CW operation. The emission, which is broadband and peaks at 600 nm, is detected above a low threshold current density and voltage of 0.01 Am-2 and 2.3 V, respectively
Keywords :
electroluminescent devices; elemental semiconductors; optical dispersion; porous materials; silicon; 2.3 V; 600 nm; CW operation; Si; VLSI compatible; broadband emission; electroluminescent porous device; external quantum efficiency; low threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950831
