DocumentCode
810165
Title
DC and RF performance of 0.15μm gate length In0.70Al 0.30As/ln0.80Ga0.20As HFETs on GaAs substrate
Author
Rorsman, N. ; Karlsson, C. ; Wang, S.M. ; Zirath, H. ; Anderson, T.G.
Author_Institution
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
31
Issue
15
fYear
1995
fDate
7/20/1995 12:00:00 AM
Firstpage
1292
Lastpage
1294
Abstract
The authors have studied the DC and microwave characteristics of 0.15 μm gate length In0.70Al0.30As/In0.80 Ga0.20As heterostructure field-effect transistors (HFETs) on GaAs substrate. A graded InAlGaAs buffer is used to accommodate the large lattice mismatch between the substrate and the channel. An intrinsic transit frequency of 140 GHz and a maximum frequency of oscillation of 200 GHz were obtained, which is the highest reported fmax for an InAlAs/InGaAs HFET lattice-mismatched on GaAs substrate
Keywords
III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; indium compounds; millimetre wave field effect transistors; semiconductor device noise; 0.15 micron; 140 GHz; 200 GHz; DC performance; GaAs; HFETs; In0.7Al0.3As-In0.8Ga0.2 As-GaAs; RF performance; heterostructure field-effect transistors; intrinsic transit frequency; lattice mismatch; maximum frequency of oscillation; microwave characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950839
Filename
400375
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