Title :
Determination of dispersion of output conductance and transconductance of InP HEMTs using low frequency S-parameter measurements
Author :
Klepser, B.-U.H. ; Patrick, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
7/20/1995 12:00:00 AM
Abstract :
A frequency analysis of the output conductance and transconductance of 0.25 μm InP based HEMTs is carried out using S-parameter measurements down to 500 Hz. It is shown that the kink in the output characteristics consists of two ranges of a reduced and an increased drain current and that the DC measured transconductance gm.DC is generally lower than gm.HF. The dispersion of gm is increased for higher drain voltages. It is also shown that the frequency limit of the dispersion of both gd and gm is increased for higher drain source voltages
Keywords :
III-V semiconductors; S-parameters; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.25 micron; HEMTs; InP; drain current; drain source voltages; frequency analysis; frequency limit; low frequency S-parameter measurements; output characteristics; output conductance; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950835
