Title :
Noise in channel doped GaInP/InGaAs HFET devices
Author :
Geiger, D. ; Mittermeier, E. ; Dickmann, J. ; Geng, C. ; Scholz, F. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fDate :
7/20/1995 12:00:00 AM
Abstract :
Quarter-micrometre channel doped GalnP/lnGaAs HFETs with high current density show a noise figure comparable to that of PM-HEMTs (0.6 dB at 12 GHz). Owing to the high linearity of the channel doped device. The noise figure shows an extremely weak dependence on drain current and bias. The absence of DX-centres in the GaInP leads to a pure 1/f noise spectrum without Gaussian shaped generation recombination parts
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; semiconductor device noise; 0.25 micron; 0.6 dB; 12 GHz; GaInP-InGaAs; bias; channel doped HFET devices; current density; drain current; linearity; microwave noise figure; pure 1/f noise spectrum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950870
