• DocumentCode
    810254
  • Title

    Serpentine superlattice nanowire-array lasers

  • Author

    Hu, S.Y. ; Yi, J.C. ; Miller, M.S. ; Leonard, D. ; Young, D.B. ; Gossard, A.C. ; Dagli, N. ; Petroff, P.M. ; Coldren, L.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    31
  • Issue
    8
  • fYear
    1995
  • fDate
    8/1/1995 12:00:00 AM
  • Firstpage
    1380
  • Lastpage
    1388
  • Abstract
    We report characterization and modeling of serpentine superlattice nanowire-array lasers. These samples were grown by molecular beam epitaxy on (100) n+-GaAs vicinal substrates. In-plane ridge-waveguide lasers with ridge stripes either parallel or perpendicular to the nanowire arrays have been characterized at low temperatures. The measured net gain spectra at 1.4 K showed strong optical gain anisotropy such that the TM mode gain became greater than the TE mode gain when the optical cavity was placed along the nanowire direction. This provides strong evidence that the lateral quantum confinement in the serpentine superlattice is stronger than the vertical quantum confinement. Optical gain spectra in the serpentine superlattice are calculated with consideration of coupling between wires and homogeneous line broadening. A good fit to the measured polarization-dependent gain spectra is achieved when the lateral Al segregation and the homogeneous line broadening are chosen to be 8% and 7 meV, respectively. This small but finite Al segregation in the serpentine superlattice provides lateral quantum confinement for holes, which results in significant anisotropy in the relation between net gain and injection current density,
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; molecular beam epitaxial growth; nanostructured materials; optical couplers; quantum well lasers; ridge waveguides; semiconductor device models; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; spectral line breadth; waveguide lasers; 1.4 K; 7 meV; GaAs vicinal substrates; GaAs-AlGaAs; GaAs-AlGaAs active layer; TE mode gain; TM mode gain; diode laser modelling; homogeneous line broadening; in-plane ridge-waveguide lasers; lateral Al segregation; lateral quantum confinement; low temperatures; measured net gain spectra; molecular beam epitaxy; nanowire arrays; nanowire direction; optical cavity; optical gain spectra; polarization-dependent gain spectra; ridge stripes; serpentine superlattice; serpentine superlattice nanowire-array lasers; strong optical gain anisotropy; vertical quantum confinement; Anisotropic magnetoresistance; Gain measurement; Geometrical optics; Laser modes; Molecular beam epitaxial growth; Optical arrays; Optical superlattices; Potential well; Semiconductor process modeling; Substrates;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.400388
  • Filename
    400388