Millimeter-wave InP lateral transferred-electron oscillators

Author

Binari, Steven C. ; Neidert, Robert E. ; Grubin, Harold L. ; Meissner, Kenith E.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

36

Issue

12

fYear

1988

Firstpage

1695

Lastpage

1700

Abstract

A lateral InP transferred-electron device (TED) designed with a high-resistivity notch adjacent to the cathode contact is presented, and its application to millimeter-wave monolithic integrated circuits is demonstrated. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been obtained from cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. A 79.9-GHz monolithic oscillator incorporating the lateral TED is reported. Experimental and theoretical results which further the understanding of the lateral device operation are presented.<>

Keywords

Gunn devices; Gunn oscillators; III-V semiconductors; MMIC; cavity resonators; indium compounds; solid-state microwave devices; 0.4 to 29.1 mW; 29.9 to 98.5 GHz; 6.7 percent; CW power output; EHF; Gunn device; III-V semiconductors; InP; MM-wave IC; MMIC; TED; cavity-tuned discrete devices; conversion efficiency; high-resistivity notch; lateral transferred-electron oscillators; millimeter-wave; monolithic integrated circuits; Anodes; Buffer layers; Cathodes; Electrons; Frequency; Indium phosphide; MIMICs; Material properties; Oscillators; Thermal conductivity;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.17401

Filename

17401