DocumentCode
810680
Title
High-power monolithic AlGaN/GaN HEMT switch for X-band applications
Author
Ciccognani, W. ; De Dominicis, M. ; Ferrari, M. ; Limiti, E. ; Peroni, M. ; Romanini, P.
Author_Institution
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome
Volume
44
Issue
15
fYear
2008
Firstpage
911
Lastpage
912
Abstract
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power- handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
Keywords
III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; X-band; compression phenomenon; frequency 10 GHz; high-power monolithic switch; insertion loss; microstrip technology; power-handling measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20081170
Filename
4568708
Link To Document