GaAs power MESFET performance sensitivity to profile and process parameter variations

Author

Trew, R.J. ; Yan, J.B. ; Stoneking, D.E.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

36

Issue

12

fYear

1988

Firstpage

1873

Lastpage

1876

Abstract

Large-signal performance sensitivities for power GaAs MESFETs fabricated with uniform, ion-implanted, and lo-hi-lo conducting-channel doping profiles are calculated and compared. The large-signal sensitivities of the RF power and power-added efficiency are determined for the device designs as a function of variations in various process-dependent parameters. It is demonstrated that the channel doping profile and breakdown voltage have the most significant influence on large-signal RF performance.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; power transistors; sensitivity analysis; solid-state microwave devices; GaAs; III-V semiconductors; channel doping profile; large-signal RF performance; lo-hi-lo conducting-channel; microwave device; performance sensitivity; power MESFET; power-added efficiency; process parameter variations; Bipolar transistors; Doping profiles; Electron devices; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Molecular beam epitaxial growth; Radio frequency; Semiconductor process modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.17425

Filename

17425