Fabrication of polycrystalline 3C-SiC thin-film diodes for microsensors

Two series of SiC/Si Schottky and heterojunction diodes were fabricated from polycrystalline (poly) 3C-SiC thin films grown at 1150degC on Si substrates by atmospheric pressure chemical vapour deposition (APCVD) using single precursor hexamethyldisilane (HMDS: Si₂(CH₃)₆). Both devices show good performance. In particular, from I-V and C-V curves of the Schottky diode, its threshold voltage (V_d), breakdown voltage, doping concentration, and the width of the depletion layer are 0.84 V, over 140 V, 2.7 times 10¹⁹ cm^-3, and 61 nm, respectively.