Title :
Moderate-dose proton implantation through double-barrier structures
Author :
Billen, K. ; Kelly, M.J. ; Gwilliam, R.M. ; Wilson, R.J. ; Henini, M.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
1/18/1996 12:00:00 AM
Abstract :
Long-range proton implantation has been carried out through double-barrier diodes, as may be required during vertical monolithic-integration. The anneal-induced recovery of the I-V characteristics is shown to improve if the implantation is carried out above room-temperature. After annealing, the peak current through one proton-implanted sample was higher than that before implantation
Keywords :
annealing; ion implantation; recovery; resonant tunnelling diodes; I-V characteristics; annealing; double-barrier diodes; proton implantation; recovery; vertical monolithic-integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960046
