DocumentCode
810814
Title
Moderate-dose proton implantation through double-barrier structures
Author
Billen, K. ; Kelly, M.J. ; Gwilliam, R.M. ; Wilson, R.J. ; Henini, M.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
32
Issue
2
fYear
1996
fDate
1/18/1996 12:00:00 AM
Firstpage
140
Lastpage
141
Abstract
Long-range proton implantation has been carried out through double-barrier diodes, as may be required during vertical monolithic-integration. The anneal-induced recovery of the I-V characteristics is shown to improve if the implantation is carried out above room-temperature. After annealing, the peak current through one proton-implanted sample was higher than that before implantation
Keywords
annealing; ion implantation; recovery; resonant tunnelling diodes; I-V characteristics; annealing; double-barrier diodes; proton implantation; recovery; vertical monolithic-integration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960046
Filename
490887
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