Title :
Silicon Microtoroidal Resonators With Integrated MEMS Tunable Coupler
Author :
Yao, Jin ; Leuenberger, David ; Lee, Ming-Chang M. ; Wu, Ming C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
Abstract :
A single crystalline silicon microtoroidal resonator with integrated MEMS-actuated tunable optical coupler is demonstrated for the first time. It is fabricated by combining hydrogen annealing and wafer bonding processes. The device operates in all three coupling regimes: under-, critical, and over-coupling. We have also developed a comprehensive model based on time-domain coupling theory. The experimental and theoretical results agree very well. The quality factor (Q) is extracted by fitting the experimental curve with the model. The unloaded Q is as high as 110 000, and the loaded Q is continuously tunable from 110 000 to 5400. The extinction ratio of the transmittance is 22.4 dB. This device can be used as a building block of resonator-based reconfigurable photonic integrated circuits
Keywords :
Q-factor; annealing; integrated optics; micro-optics; microcavities; micromechanical resonators; optical couplers; optical fabrication; optical resonators; silicon; wafer bonding; MEMS actuation; Si; critical coupling regime; extinction ratio; hydrogen annealing; integrated MEMS coupler; microelectromechanical systems; microtoroidal resonators; optical coupler; over-coupling regime; quality factor; reconfigurable photonic integrated circuits; resonator-based photonic integrated circuits; silicon resonators; single crystalline silicon resonator; time-domain coupling theory; transmittance; tunable MEMS coupler; under-coupling regime; wafer bonding; Annealing; Crystallization; Hydrogen; Integrated optics; Micromechanical devices; Optical coupling; Optical resonators; Semiconductor device modeling; Silicon; Tunable circuits and devices; Integrated optics; optical resonators; surface roughness; tunable;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.893743
