DocumentCode :
810867
Title :
Gated-diode amplifiers
Author :
Luk, Wing K. ; Dennard, Robert H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
52
Issue :
5
fYear :
2005
fDate :
5/1/2005 12:00:00 AM
Firstpage :
266
Lastpage :
270
Abstract :
This brief describes MOS amplifiers comprising a gated diode and a field-effect transistor. A gated diode is a two-terminal MOS device in which charge is stored when a voltage above the threshold voltage is applied between the gate and the source, and negligible charge is stored otherwise. The operation makes use of the nonlinear capacitance of the gated diode for voltage boosting, where voltage for 1-data is boosted high and voltage for 0-data stays low, achieving significant voltage gain, signal margin, and current drive. Further, a number of small-signal single-ended sense amplifier circuits are presented. The gated-diode sense amplifiers deliver high gain, require low power and low device count, and are tolerant to voltage and process variation.
Keywords :
MIS devices; MOS integrated circuits; amplifiers; capacitors; semiconductor diodes; MOS amplifiers; current drive; field-effect transistor; gated-diode amplifiers; gated-diode sense amplifiers; nonlinear capacitance; nonlinear capacitor; nonlinear circuits; signal margin; single-ended sense amplifier circuits; single-ended sense amplifiers; small-signal sense amplifiers; threshold voltage; two-terminal MOS device; voltage boosting; voltage gain; Boosting; Capacitance; Circuit noise; Diodes; FETs; MOS devices; Random access memory; Signal processing; Threshold voltage; Wires; Gated diode; MOS amplifiers; nonlinear capacitor; nonlinear circuits; single-ended sense amplifiers;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2005.843494
Filename :
1431105
Link To Document :
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