A K/Ka-band distributed power amplifier with capacitive drain coupling

Author

Schindler, Manfred J. ; Wendler, John P. ; Zaitlin, Mark P. ; Miller, Mary Ellen ; Dormail, John R.

Author_Institution

Raytheon Co., Lexington, MA, USA

Volume

36

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1902

Lastpage

1907

Abstract

A 14- to 37-GHz GaAs MMIC distributed power amplifier is discussed. The amplifier has three FETs of varying periphery, all capacitively coupled to the gate line. The drain of the FET nearest the output is capacitively coupled to the drain line to increase output power. A gain of 4 to 5 dB has been achieved from 14 to 37 GHz. Output power of 20 dBm or greater has been demonstrated at frequencies up to 33 GHz at 1-dB gain compression. A maximum 1-dB gain-compressed output power of 23.5 dBm (220 mW) has been measured at 36 GHz. The circuit is completely monolithic, with all bias and matching circuitry included on the chip

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; 14 to 37 GHz; 220 mW; 4 to 5 dB; FETs; GaAs; III-V semiconductors; K-band; Ka-band; MMIC; SHF; capacitive drain coupling; distributed power amplifier; monolithic microwave IC; Circuits; Distributed amplifiers; FETs; Frequency; Gain measurement; Gallium arsenide; MMICs; Power amplifiers; Power generation; Power measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.17431

Filename

17431