Monolithic 60 GHz GaAs IMPATT oscillators

Author

Bayraktaroglu, Burhan

Author_Institution

Texas Instrum., Dallas, TX, USA

Volume

36

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1925

Lastpage

1929

Abstract

A monolithic circuit design developed for GaAs IMPATT diodes to enable them to operate under CW conditions at V-band frequencies is discussed. All active and passive circuit components were fabricated on the top surface of the GaAs substrate. Good heat dissipation was achieved by distributing the device active area over a large surface area while maintaining a lumped mode of operation. More than 100-mW CW output power was obtained in the 58-65-GHz frequency range, with up to 14.5% conversion efficiency. In an alternative design, varactor diodes were integrated with the IMPATT circuits to produce the first monolithic voltage-controlled oscillators (VCOs) operating under CW conditions. A tuning bandwidth greater than 3.5 GHz was obtained at a center frequency of 70 GHz, with maximum CW output power of 40 mW

Keywords

III-V semiconductors; IMPATT diodes; MMIC; gallium arsenide; microwave oscillators; tuning; variable-frequency oscillators; 14.5 percent; 3.5 GHz; 40 to 100 mW; 58 to 70 GHz; CW operating conditions; CW output power; EHF; GaAs; III-V semiconductors; IMPATT oscillators; MM-wave type; MMIC; V-band frequencies; VCOs; VFO; conversion efficiency; heat dissipation; monolithic circuit design; tuning bandwidth; varactor diodes; voltage-controlled oscillators; Circuit optimization; Circuit synthesis; Diodes; Frequency conversion; Gallium arsenide; Passive circuits; Power generation; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.17435

Filename

17435