Title :
18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 mu m gate length quantum well HEMTs
Author :
Wang, Zhan-Guo ; Nowotny, U. ; Berroth, Manfred ; Bronner, W. ; Hofmann, P. ; Hulsmann, A. ; Kohler, Klaus ; Raynor, B. ; Schneider, Jurgen
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
A monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0.3 mu m gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated optoelectronics; multiplexing equipment; optical communication equipment; semiconductor junction lasers; 0.3 micron; 18 Gbit/s; 25 mA; 45 mA; AlGaAs; DC current; gate length; laser diode driver; modulation current; monolithically integrated 2:1 multiplexer; open eye diagrams; pseudorandom data streams; quantum well HEMTs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921096
