DocumentCode :
810975
Title :
Three-dimensional self-organized microoptoelectronic systems for board-level reconfigurable optical interconnects-performance modeling and simulation
Author :
Yoshimura, Tetsuzo ; Ojima, Masanori ; Arai, Yukihiko ; Asama, Kunihiko
Author_Institution :
Dept. of Electron., Tokyo Univ. of Technol., Japan
Volume :
9
Issue :
2
fYear :
2003
Firstpage :
492
Lastpage :
511
Abstract :
Self-organized microoptoelectronic system (SELMOS) built from three concepts - scalable film optical link multichip-module (S-FOLM), three-dimensional (3-D) microoptical switching system (3D-MOSS), and self-organized lightwave network (SOLNET)-is proposed. The feasibility of SELMOS for board-level reconfigurable optical interconnects is studied by the beam propagation method/finite difference time domain simulation focusing on three key issues; reducing size/cost of electrical to optical (E-O) and optical to electrical (O-E) signal conversion devices, tolerating alignment accuracy for optical coupling, and miniaturizing high-speed massive optical switching. S-FOLM, which consists of film-waveguide-based 3-D structures with embedded optoelectronic active elements and optical Z-connections for interplane links, enables drastic size/cost reduction of E-O and O-E conversion devices. 3D-MOSS, which is an S-FOLM with embedded microoptical switches, has a potentiality of 1024 × 1024 switching with a system size of ∼1.4 × 0.6 cm2 and an insertion loss of 29 dB. The switching rate of the 3D-MOSS is determined by the heat releasing speed to be ∼2 × 105 1/s when PLZT waveguide-prism-deflector microoptical switches are used. By using advanced electrooptic materials, rates higher than 108 1/s are expected. Twenty-five percent misalignment in waveguide assembly raises the insertion loss of the 3D-MOSS to 73 dB. The loss is reduced to 32 dB in SELMOS-based 3D-MOSS, where a self-organized 3-D microoptical network is implemented using SOLNET. Further loss reduction is expected by structural optimization of loss-inducing parts. Thus, SELMOS is found to be a solution of the three key issues for board-level reconfigurable optical interconnects. In addition, photolithographic packaging with selectively occupied repeated transfer (PL-Pack with SORT), which integrates different types of active elements into one substrate in desired arrangements using an all-photolithographic process, can contribute to cost and the coefficient of thermal expansion-mismatching reduction.
Keywords :
electro-optical deflectors; electro-optical switches; finite difference time-domain analysis; integrated optoelectronics; micro-optics; multichip modules; optical interconnections; optical losses; optical prisms; photolithography; printed circuit accessories; reconfigurable architectures; 0.6 cm; 1.4 cm; 29 dB; 32 dB; 73 dB; PLZT waveguide-prism-deflector microoptical switches; SORT; advanced electrooptic materials; alignment accuracy; all-photolithographic process; beam propagation method; board-level reconfigurable optical interconnects; cost reduction; electrical to optical signal conversion devices; embedded microoptical switches; embedded optoelectronic active elements; film-waveguide-based 3-D structures; finite difference time domain simulation; heat releasing speed; high-speed massive optical switching; insertion loss; interplane links; loss-inducing parts; modeling; optical Z-connections; optical coupling; optical to electrical signal conversion devices; performance; photolithographic packaging; scalable film optical link multichip-module; selectively occupied repeated transfer; self-organized lightwave network; simulation; size reduction; structural optimization; switching rate; thermal expansion-mismatching reduction; three-dimensional microoptical switching system; three-dimensional self-organized microoptoelectronic systems; waveguide assembly; Costs; High speed optical techniques; Insertion loss; Optical devices; Optical fiber communication; Optical films; Optical interconnections; Optical losses; Optical waveguides; Switching systems;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2003.812503
Filename :
1239017
Link To Document :
بازگشت