Title :
Segmented dual-gate MESFETs for variable gain and power amplifiers in GaAs MMIC
Author :
Snow, Keith H. ; Komiak, James J. ; Bates, David A.
Author_Institution :
General Electric Co., Syracuse, NY, USA
Abstract :
The design and performance of C-, X-, and Ku-band GaAs MMIC variable-gain and variable-power amplifier circuits using an improved segmented dual-gate MESFET device with binary scaled gate width ratios are reported. The demonstrated 35-dB control range, flat octave band gain response, and small incidental phase variation are significantly superior to the reported characteristics of conventional analog controlled devices. The design provides precise amplitude quantization while minimizing phase variations, and thus calibration complexity, incurred by gain switching.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; C-band; GaAs; III-V semiconductors; Ku-band; MMIC; X-band; binary scaled gate width ratios; flat octave band gain response; monolithic microwave IC; power amplifiers; segmented dual-gate MESFET; variable gain; variable-power; Circuit synthesis; Digital control; Electric variables control; Gallium arsenide; MESFETs; MMICs; Performance gain; Phased arrays; Power amplifiers; Snow;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
