• DocumentCode
    811023
  • Title

    Improved Schottky barrier on n-Sb2S3 films chemically deposited with silicotungstic acid (solar cells)

  • Author

    Savadogo, O. ; Mandal, Krishna C.

  • Author_Institution
    Ecole Polytech. de Montreal, Que., Canada
  • Volume
    28
  • Issue
    18
  • fYear
    1992
  • Firstpage
    1682
  • Lastpage
    1683
  • Abstract
    The first fabrication of low cost Schottky barrier solar cells on chemically deposited polycrystalline n-Sb2S3 thin films is reported. It is observed that in the films deposited with silicotungstic acid and annealed, the Schottky barrier height ( phi b) of the Au/n-Sb2S3 junctions is considerably improved from 0.54 to 0.76 eV. The ideality factor n decreased from 2.32 to 1.08 and the reverse-saturation current density J0 from 3.2*10-6 to 1.5*10-9 A cm-2. Under AM1 illumination, the improved diode exhibited a conversion efficiency of approximately 3%.
  • Keywords
    Schottky effect; antimony compounds; current density; electrodeposits; gold; semiconductor materials; semiconductor thin films; semiconductor-metal boundaries; solar cells; 3 percent; AM1 illumination; Au-Sb 2S 3 junction; ITO; InSnO; Schottky barrier height; Schottky barrier solar cells; chemical deposition; conversion efficiency; diode; ideality factor; n-type; reverse-saturation current density; silicotungstic acid;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921069
  • Filename
    158546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=811023