DocumentCode :
811038
Title :
Experimental implementation of an optoelectronic neural network scheduler
Author :
Waddie, Andrew J. ; Randle, Yves R. ; Symington, Keith J. ; Snowdon, John F. ; Taghizadeh, Mohammad R.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
Volume :
9
Issue :
2
fYear :
2003
Firstpage :
557
Lastpage :
564
Abstract :
We describe the design and successful operation of an optoelectronic Hopfield network demonstrator system. The Hopfield network, one of the simpler space-invariant interneuronal connection networks, was chosen due to its observed efficiency in solving optimization tasks. The demonstrator system, based around a free-space diffractive optical interconnect, was designed to perform a range of optimization tasks, in particular those associated with the scheduling of packets through different switching topologies. Experimental optimization of the neural network throughput, for both a crossbar and Banyan switch topology, allows the neural network parameters (e.g., neuron bias, neuron weighting) to be tuned to ensure optimal operation of the network for a particular switch topology. In addition, the demonstrator allows an investigation of the critical parameters governing the interoperation of the different modules. In this paper, we describe the effect of two of these parameters, namely, the operating temperature of the optoelectronic devices and the accuracy of the interconnection fabrication technology. The weighted interconnections in this optoelectronic system are provided by a diffractive optical element/lens combination whilst the neurons are implemented electronically. The transition between the electronic and optical domains is handled by an 8×8 VCSEL array for the electronic-optic interface, and an 8×8 Si photodetector array for the optic-electronic interface. The VCSEL array consists of oxide-confined near-infrared GaAs devices capable of 250-MHz modulation at a wavelength of 960 nm. The diffractive optical interconnect is designed using simulated annealing optimization and fabricated using very large scale integration photolithography. Using these techniques, it is possible to create interconnects with a total efficiency of ∼70% and a nonuniformity of <1%.
Keywords :
Hopfield neural nets; VLSI; diffractive optical elements; integrated optoelectronics; multistage interconnection networks; optical interconnections; optical neural nets; photodetectors; photolithography; semiconductor laser arrays; simulated annealing; surface emitting lasers; 250 MHz; 70 percent; 960 nm; Banyan switch topology; GaAs; Si; Si photodetector array; VCSEL array; critical parameters; crossbar; diffractive optical element/lens combination; diffractive optical interconnect; efficiency; electronic domains; electronic-optic interface; free-space diffractive optical interconnect; interconnection fabrication technology accuracy; modulation; neural network throughput; neuron bias; neuron weighting; nonuniformity; operating temperature; optic-electronic interface; optical domains; optimal operation; optimization tasks; optoelectronic Hopfield network demonstrator system; optoelectronic devices; optoelectronic neural network scheduler; oxide-confined near-infrared GaAs devices; packet scheduling; simulated annealing optimization; space-invariant interneuronal connection networks; switch topology; switching topologies; total efficiency; very large scale integration photolithography; weighted interconnections; Design optimization; Network topology; Neural networks; Neurons; Optical arrays; Optical design; Optical diffraction; Optical interconnections; Optical modulation; Switches;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2003.813308
Filename :
1239022
Link To Document :
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