DocumentCode
811042
Title
A new approach to the RF power operation of MESFETs
Author
Halkias, George ; Gerard, Henri ; Crosnier, Yves ; Salmer, Georges
Author_Institution
Found. for Res. & Technol.-Hellas, Crete, Greece
Volume
37
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
817
Lastpage
825
Abstract
A large-signal numerical model for a MESFET is described which allows investigations of the behavior of these devices at X-band frequencies under large-signal conditions. The authors of numerical simulations are compared with those of the measurements and provide on improved understanding of the behavior of GaAs MESFETs that operate at microwave frequencies and with high power requirements. The analysis yields some indications about the optimum design of these devices.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; power transistors; semiconductor device models; solid-state microwave devices; GaAs; III-V semiconductor; MESFET; RF power operation; X-band frequencies; large-signal numerical model; microwave frequencies; optimum design; power transistor; Electrons; Gallium arsenide; Impedance; Intrusion detection; MESFETs; Numerical models; Power amplifiers; Power generation; Radio frequency; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.17447
Filename
17447
Link To Document