Title :
RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz
Author :
Jessen, G.H. ; Gillespie, J.K. ; Via, G.D. ; Crespo, A. ; Langley, D. ; Aumer, M.E. ; Ward, C.S. ; Henry, H.G. ; Thomson, D.B. ; Partlow, D.P.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH
fDate :
5/1/2007 12:00:00 AM
Abstract :
Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a total width of 2times150 mum. Final passivated performance values for these devices are Imax=1279 mA/mm, IDSS=1182 mA/mm, Rc=0.43 Omegamiddotmm, rhos=315 Omega/sq, fT=45 GHz, fmax(MAG) =64 GHz, and gm=268 mS/mm. Continuous-wave power measurements at 10 GHz produced Psat=3.8 W/mm, Gt=8.6 dB, and PAE=30% at VDS=20 V at 25% IDSS. To our knowledge, these are the first power measurements reported at 10 GHz for this material
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave measurement; power measurement; silicon compounds; wide band gap semiconductors; 0.24 micron; 10 GHz; 150 micron; 2 micron; 20 V; 45 GHz; 64 GHz; HEMT; InAlN-GaN; RF power measurements; SiC; T-gates; continuous-wave power measurements; Aluminum gallium nitride; Current density; Decision support systems; Gallium nitride; HEMTs; MODFETs; Plasma temperature; Power measurement; Radio frequency; Silicon carbide; AlInN; GaN; InAlN; high-electron mobility transistor (HEMT); power;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.895417
