• DocumentCode
    811072
  • Title

    n-InGaAs Schottky diode with current transport along 2-DEG channel

  • Author

    Kordos, P. ; Marso, M. ; Fox, A. ; Hollfelder, M. ; Luth, H.

  • Author_Institution
    Forschungszentrum Julich, Germany
  • Volume
    28
  • Issue
    18
  • fYear
    1992
  • Firstpage
    1689
  • Lastpage
    1690
  • Abstract
    Planar pseudomorphic InGaAs Schottky diodes with current transport along the 2-DEG channel were prepared and their DC properties are described. The I-V behaviour is similar to diodes without 2-DEG (n=1.12, phi B=0.49 eV), but the C-V characteristics show stronger capacitance variation. On double-barrier 2-DEG Schottky diodes the capacitance ratio Cmax/Cmin=42 and the varactor sensitivity S(1 V)=3.75 are obtained and for optimised devices an RC cutoff frequency higher than 2 THz is expected.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; capacitance; gallium arsenide; indium compounds; solid-state microwave devices; 2 THz; 2DEG channel; C-V characteristics; DC properties; I-V behaviour; InGaAs-InP; InP substrate; MM-wave technology; RC cutoff frequency; Schottky diode; capacitance ratio; current transport; planar pseudomorphic diodes; varactor sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921074
  • Filename
    158551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=811072