Title :
Comparative study of different current mode sense amplifiers in submicron CMOS technology
Author :
Chrisanthopoulos, A. ; Moisiadis, Y. ; Tsiatouhas, Y. ; Arapoyanni, A.
Author_Institution :
Adv. Silicon Solutions Div., Integrated Syst. Dev. S.A, Athens, Greece
fDate :
6/24/1905 12:00:00 AM
Abstract :
A comparison of different current mode sense amplifiers using 0.25 μm CMOS technology is presented. The sense amplifiers under consideration are suitable for current sensing in SRAM and flash non-volatile memories. Simulation results are given regarding the sensing delay time for different power supply voltages Vdd and bit-line capacitance values. Comparative results are also provided for the energy dissipated per sensing operation, while worst-case and high temperature simulations are included, in order to expose limitations of the sensors in various operating conditions
Keywords :
CMOS memory circuits; SRAM chips; amplifiers; capacitance; current-mode circuits; delays; differential amplifiers; flash memories; 0.25 micron; PMOS bias type; SRAM memories; bit-line capacitance values; clamped bit-line type; current mode sense amplifiers; differential latch type; energy dissipated per sensing operation; flash nonvolatile memories; high-temperature simulations; power supply voltages; sensing delay time; submicron CMOS technology;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20020425
