Comparative study of different current mode sense amplifiers in submicron CMOS technology

Author

Chrisanthopoulos, A. ; Moisiadis, Y. ; Tsiatouhas, Y. ; Arapoyanni, A.

Author_Institution

Adv. Silicon Solutions Div., Integrated Syst. Dev. S.A, Athens, Greece

Volume

149

Issue

3

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

154

Lastpage

158

Abstract

A comparison of different current mode sense amplifiers using 0.25 μm CMOS technology is presented. The sense amplifiers under consideration are suitable for current sensing in SRAM and flash non-volatile memories. Simulation results are given regarding the sensing delay time for different power supply voltages V_dd and bit-line capacitance values. Comparative results are also provided for the energy dissipated per sensing operation, while worst-case and high temperature simulations are included, in order to expose limitations of the sensors in various operating conditions

Keywords

CMOS memory circuits; SRAM chips; amplifiers; capacitance; current-mode circuits; delays; differential amplifiers; flash memories; 0.25 micron; PMOS bias type; SRAM memories; bit-line capacitance values; clamped bit-line type; current mode sense amplifiers; differential latch type; energy dissipated per sensing operation; flash nonvolatile memories; high-temperature simulations; power supply voltages; sensing delay time; submicron CMOS technology;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20020425

Filename

1030086